We demonstrate the transfer of sub-10nm10nm features into nickel using a hard stamp. Nanostructures were transferred directly from diamond and SiC in a single step by pressing the stamp into nickel at room temperature. The patterns were generated using ultrahigh resolution electron beam lithography. Patterns were transferred to the diamond and SiC using RIE etching with an O2O2 plasma used for the diamond and a SF6+O2SF6+O2 mixture used for the SiC. Hydrogen Silsesquioxane was used as a resist and served as a mask in the plasma etching.
Lister, K. A., et al. “Direct imprint of sub-10 nm features into metal using diamond and SiC stamps.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 22.6 (2004): 3257-3259.