Search
Scientific-Publications-Feb19

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

This paper uses a parameter extraction method to investigate key parameters in GaN-based DFBs, as well as spectral linewidth measurements. Single-wavelength blue laser diodes are becoming a topic of significant research interest and gaining a better understanding of the device performance will allow improvements in design and ultimately improve their use in a number of commercial applications. To the authors’ knowledge this is the first reporting of these parameters in GaN devices.

Abstract

Impact Statement: This paper uses a parameter extraction method to investigate key parameters in GaN-based DFBs, as well as spectral linewidth measurements. Single-wavelength blue laser diodes are becoming a topic of significant research interest and gaining a better understanding of the device performance will allow improvements in design and ultimately improve their use in a number of commercial applications. To the authors’ knowledge this is the first reporting of these parameters in GaN devices.

Abstract: We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors’ knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

S. Gwyn, S.Watson, T. Slight, M. Knapp, S. Viola, P. Ivanov, W. Zhang, A. Yadav, E. Rafailov, M. Haji, K. Doherty, S. Stanczyk, S. Grzanka, P. Perlin, S. Najda, M. Leszczyski and A. Kelly.

https://ieeexplore.ieee.org/document/9296250

Share this post

Connect with us
Stay informed of our latest innovations, sign up to our newsletter.

News & Events

Metasurface Optics

KNT have collaborated with the University of Huddersfield in the production of metasurface optics for metrology applications.

Read More »

How can we help you to bring your project together?