Investigation of thermal effects in through-silicon vias using scanning thermal microscopy

This work presents an analysis of the influence of graphene reinforcement on properties of silicon carbide composites. Samples were prepared by a spark plasma sintering method. The density and hardness were obtained in the preliminary experiments. The thermal diffusivity was determined by the continuous wave photothermal technique with detection based on infrared radiometry. The thermal diffusivity is in the range of (0.48 to 0.57) cm 2⋅ s −1 for samples prepared from granulated SiC and in the range of (0.56 to 0.71) cm 2⋅ s −1 for samples prepared from SiC powder. Thermal properties are correlated with the density of SiC ceramics. The thermal diffusivity of samples with a higher density is lower in comparison to samples witResults of quantitative investigations of copper through-silicon vias (TSVs) are presented. The experiments were performed using scanning thermal microscopy (SThM), enabling highly localized imaging of thermal contrast between the copper TSVs and the surrounding material. Both dc and ac active-mode SThM was used and differences between these variants are shown. SThM investigations of TSVs may provide information on copper quality in TSV, as well as may lead to quantitative investigation of thermal boundaries in micro- and nanoelectronic structures. A proposal for heat flow analysis in a TSV, which includes the influence of the boundary region between the TSV and the silicon substrate, is presented; estimation of contact resistance and boundary thermal conductance is also given. a lower density.

Wielgoszewski, G., Jóźwiak, G., Babij, M., Baraniecki, T., Geer, R., & Gotszalk, T. (2014). Investigation of thermal effects in through-silicon vias using scanning thermal microscopy. Micron, 66, 63-68.

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