We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.
Thomas J. Slight; Amit Yadav; Opeoluwa Odedina; Wyn Meredith; Kevin E. Docherty; Edik Rafailov and Anthony E. Kelly. InGaN/GaN Laser Diodes With High Order Notched Gratings. IEEE Photonics Technology Letters 29(23), 2020-2022.
https://doi.org/10.1109/LPT.2017.2759903
